In recent theoretical works devoted to topological insulators, it was shown that, in addition to the state of a topological insulator, due to the presence of the inverse initial state and the presence of symmetry with respect to time inversion with the topological invariant Z2, in the electronic energy spectrum of charge carriers of crystals like bismuth, states of a topological insulator can be realized due to the specific boundary conditions, as well as the presence of rotational symmetry, with a higher order topological invariant. During this work, we wanted to detect the signs of the topological insulator state in the galvanomagnetic properties of thin bismuth films, which have a significant difference in the quality of the crystal structure.

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