Silicon nanoantennas offer unprecedented versatility for light manipulation due to low absorption and high refractive index that enables strong magnetic and electric Mie resonances in the visible and near-infrared ranges. However, despite the flexibility of the underlying concept of all-dielectric nanophotonics, the functionality of silicon-based nanoantennas and metasurfaces is usually permanently fixed at the fabrication stage, being determined by the shape, size, and spatial arrangement of the structure. This hinders their application for cases when active and tunable operation is required. One of the ways to impose tunability onto all-dielectric structures is the introduction of inclusions made of phase change materials (PCM), which possess notably different optical properties in amorphous and crystalline states and can be switched reversibly and repeatedly between them. Here, we propose a design for a hybrid nanoantenna constructed from silicon with a thin layer of phase change material GeSbSeTe that allows dynamic control over the direction of surface plasmon polariton excited by the nanoantenna on a metallic film. In particular, we demonstrate the possibility of complete inversion of the directivity pattern of the excited surface plasmon polariton upon amorphous-to-crystalline switching of the PCM inclusion. The proposed design highlights the potential of hybrid Si/PCM nanoantennas as light modulators and elements for on-chip signal multiplexing and demultiplexing.

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