In this work, we demonstrate the possibility of using local anodic oxidation (LAO) for fabricating optical devices based on thin transition metal dichalcogenides (TMDC) layers. By LAO we fabricated an optical cavity from 6-layered MoSe2 flake transferred on Si/Au substrate. Optical properties were investigated by measuring microphotoluminescence. The cavity exhibits three order of magnitude enhancement of the flake's photoluminescence, which is only one order of magnitude lower than the monolayer on a SiO2 substrate. Here we show that LAO is a high-precision lithography method suitable for fabricating optoelectronic devices made of thin TMDC layers.

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