Influence of ion beam energy on surface roughness and density of In₂O₃ thin films Available to Purchase

In this work the characteristics of Indium oxide (In₂O₃) thin films on Silicon substrate were investigated as a function of Ion beam energy. Indium oxide (In₂O₃) thin films were grown on single crystal silicon substrates by using ion beam sputtering at room temperature. Effect of ion beam energy on transition from amorphous to polycrystalline, surface roughness and densities were investigated by grazing incidence X-ray reflectivity (GIXRR) and grazing incidence X-ray diffraction (GIXRD) techniques by depositing [In₂O₃]_x5 films at various beam energies ranging from 600eV to 1400eV at Ar flow of 3.0 cm³/min. The effects of ion beam energies on the deposition rate showed that the deposition rate increases with the increase of ion beam energy. X-ray study shows that the surface roughness decreases with increase in beam energy and found lowest 2.0Å at 1400eV beam energy. But the highest density 7.07gm/cm³ of the film achieved at 1000eV beam energy which is near to bulk value of In2O3. It is suggested that the ion and particles bombardment at higher energies cause a smoother surface.