In this work the characteristics of Indium oxide (In2O3) thin films on Silicon substrate were investigated as a function of Ion beam energy. Indium oxide (In2O3) thin films were grown on single crystal silicon substrates by using ion beam sputtering at room temperature. Effect of ion beam energy on transition from amorphous to polycrystalline, surface roughness and densities were investigated by grazing incidence X-ray reflectivity (GIXRR) and grazing incidence X-ray diffraction (GIXRD) techniques by depositing [In2O3]x5 films at various beam energies ranging from 600eV to 1400eV at Ar flow of 3.0 cm3/min. The effects of ion beam energies on the deposition rate showed that the deposition rate increases with the increase of ion beam energy. X-ray study shows that the surface roughness decreases with increase in beam energy and found lowest 2.0Å at 1400eV beam energy. But the highest density 7.07gm/cm3 of the film achieved at 1000eV beam energy which is near to bulk value of In2O3. It is suggested that the ion and particles bombardment at higher energies cause a smoother surface.
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5 November 2020
DAE SOLID STATE PHYSICS SYMPOSIUM 2019
18–22 December 2019
Jodhpur, India
Research Article|
November 05 2020
Influence of ion beam energy on surface roughness and density of In2O3 thin films Available to Purchase
Rajnish Dhawan;
Rajnish Dhawan
*
Synchrotrons Utilization section, Raja Ramanna Centre for Advanced Technology
, Indore, India
*Corresponding Author: [email protected]
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P. K. Yadav
P. K. Yadav
Synchrotrons Utilization section, Raja Ramanna Centre for Advanced Technology
, Indore, India
Search for other works by this author on:
Rajnish Dhawan
*
Synchrotrons Utilization section, Raja Ramanna Centre for Advanced Technology
, Indore, India
P. K. Yadav
Synchrotrons Utilization section, Raja Ramanna Centre for Advanced Technology
, Indore, India
*Corresponding Author: [email protected]
AIP Conf. Proc. 2265, 030286 (2020)
Citation
Rajnish Dhawan, P. K. Yadav; Influence of ion beam energy on surface roughness and density of In2O3 thin films. AIP Conf. Proc. 5 November 2020; 2265 (1): 030286. https://doi.org/10.1063/5.0017709
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