Present study reports the estimation of light induced defects in Se90In10-xAgx (x = 0, 2, 4, 8) thin films on prolonged exposure of light. Light induced defects have been evaluated by using space charge limited conduction (SCLC) measurements. For this purpose, measurements have been made before and after exposing amorphous films to white light for different exposure times and results showed that the density of light induced metastable defects increases with the light exposure time. It is also found that fractional increase in the density of light induced defects decreases as Ag concentration increases and decrease is more at higher light exposure times, therefore these samples can be used for optoelectronic devices.

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