Optically controllable memory hysteresis in solution processed ALPO dielectric

A optical control of memory hysteresis in terms of capacitance voltage (CV) has been investigated in fully solution processed aluminium oxide (ALPO) dielectric based devices. The CV measurement is performed on metal insulator semiconductor (MIS) structure in presence of different light illumination. The measured CV shows a memory hysteresis (ΔV_FB) of 14.30V in presence of white light illumination (20W) while DC voltage is swept from -15V to 15V and back to -15V (with additional AC voltage of 100mV) at a frequency of 100 kHz. The amplitude of ΔV_FB is decreases to 13.84V while UV light (wavelength of 365nm with power of 25W) was illuminated. The ΔV_FB is even degrading to 13.49 when no light is present. Hence a large variation of memory hysteresis of 810mV is obtained with respect to the variation of the different light illumination.