In order to solve the problem of ensuring the required level of reliability of modern radio electronic systems for space, aviation and special purposes on the basis of ultra-high-speed heterostructure nanoelectronics devices, methodology was elaborated aimed at design, development and technological optimization of such devices. It is proposed to use a special efficiency preservation coefficient as the target function, which makes it possible to take into account parametric alterations within the assigned operational tolerance and is characterized by practice-oriented advantages in comparison with the so-called integral probability of performing the given functions. The problem of reduced accuracy in forecasting electrical properties of semiconductor structures in nanoelectronics devices with a low dimensional channel is solved. A gerontological physical and mathematical model for AlGaAs-heterostructure nanoelectronics devices with transverse transport was developed, which made it possible to solve the problem of limited applicability of the methods established by the classical statistical theory of reliability to ensure increased requirements to durability of such devices in electronic systems for space purposes operating in severe conditions and operating modes.

1.
N.A.
Vetrova
,
A.G.
Gudkov
,
V.D.
Shashurin
,
O.S.
Naraikin
Technological Optimization of Devices for Safe Storage of Platelet-Containing Transfusion Media
,
Biomedical Engineering.
51
(
4
):1–4 November. pp.
18
21
.
2017
2.
A.
Srivastava
Microfabricated Terahertz Vacuum Electron Devices: Technology, Capabilities and Performance Overview
.
European Journal of Advances in Engineering and Technology
, vol.
2
p.
54
,
2015
3.
K.C.
Magruder
,
A.F.J.
Levi
Optimal design of heterostructure tunnel diode with nonlinear current–voltage characteristic
.
Physica E
44
, p.
1503
1509
,
2012
.
4.
V.D.
Shashurin
,
N.A.
Vetrova
,
I.A.
Volkov
,
K. P.
Pchelintsev
,
Ensuring and control of reliability of radio electronic systems based on nanodevices
,
Nanoengineering No.
1
(
43
), pp.
37
42
,
2015
.
5.
J. E.
Rayas-Sanchez
,
J. L.
Chavez-Hurtado
,
Z.
Brito-Brito
,
Design optimization of full-wave EM models by low-order low-dimension polynomial surrogate functionals, Numerical Modelling: Electron
.
Networks Dev. Fields
, vol.
13
, Sep.
2015
.
6.
N.A.
Vetrova
,
E.A.
Skorokhodov
,
V.D.
Shashurin
,
Analysis of technology errors on output electric parameters of microwave radio signal mixers on resonance-tunnel diodes
.
Science and education: Bauman MSTU scientific
edition No.
12
, p.
26
,
2011
.
7.
V.I.
Ushanov
,
V.
Chaldyshev
,
V. V.
Preobrazhenskii
,
M.A.
Putyato
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature
,
Semiconductors
– Vol.
52
(
13
), p.
1704
1707
,
2018
.
8.
V
Moskaliuk
,
T
Saurova
Compact models of the double-barrier resonant tunneling diode
,
IEEE 35th Int. Conf. on Electr. and Nanotech. (ELNANO) (Kiev)
p
177
,
2015
9.
S.
Nadar
,
M.
Zaknoune
,
X.
Wallart
High performance heterostructure low barrier diodes for sub-THz detection
,
IEEE Transactions on Terahertz Science and Technology..
7
. p.
780
788
.
2017
10.
I.I.
Abramov
, Basics of micro- and nanoelectronics elements simulation,
LAPLAMBERT Academic Publishing
,
Saarbrücken, Germany
444
c.
2016
11.
A. V.
Murel
,
V.M.
Daniltsev
,
E.V.
Demidov
,
M.N.
Drozdov
,
V.I.
Shashkin
,
Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping
,
Semiconductors
47
,
2013
.
12.
N.A.
Vetrova
Y.A.
Ivanov
,
E.V.
Kuimov
,
K.P.
Pchelintsev
,
V.D.
Shashurin
,
Modeling of current transfer in AlAs/GaAsheterostructures with accounting for inter valley scattering
,
Nanosistemy, Informacionnye Tehnologii
, №
10
(
1
), p.
71
76
,
2018
.
13.
M.M.
Venediktov
,
E.S.
Obolenskaya
,
V.K.
Kiselev
,
S. V.
Obolenskiy
,
Estimation of ionizing radiation impact on electronic components based on the results of limited samples testing
,
Journal of radio electronics
, No.
1
,
2017
.
14.
W.A.
Basit
Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments
,
Nuclear Engineering and Technology
, vol.
48
, pp.
1219
1229
,
2016
.
This content is only available via PDF.
You do not currently have access to this content.