We report the single crystal growth and characterization of crystalline topological insulator SnTe with XRD, SEM, EDX and resistivity measurements. We have grown SnTe single crystal by modified Bridgman method. X-ray diffraction analysis shows the orientation of the cleaved sample along {200} reflections showing the single crystalline nature of our crystal. Single β-SnTe phase was confirmed from the Rietveld refinement of room temperature-powder XRD pattern. Scanning Electron Microscopy (SEM) image shows flat terraces demonstrating a layered structure in SnTe single crystal. Energy Dispersive X-ray spectroscopy (EDX) on different regions of same crystal showsnearly1:1 stoichiometry throughout the grown crystal. Zero field transport measurements on (200) plane shows a clear metallic behavior down to 2K having the residual resistivity ratio (RRR) ∼6.8. The hump in temperature derivative of resistivity curve at ∼60K indicates the transition due to Teantisite defects.

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