Light emitting diode (LED) is solid state lighting uses semiconductor material and convert the electrical energy to light energy. Titanium dioxide (TiO2) was used in optoelectronic devices because it is good purity and easily synthesizing onto thin film. TiO2 nanotubes was prepared by electrochemical anodization method at room temperature. The TiO2 nanotubes was investigated amorphous and annealed sample at 450°C. The surface morphology revealed that sample annealed at 450°C showed uniformity with a regular porous on top layer of TiO2. Raman pattern showed the amorphous-to-crystalline anodic TiO2 sample transition with anodization. Optical properties showed the TiO2 nanotubes annealed at 450°C has not sharp absorbance edge and it is relates to the oxygen deficiency in nanotube material. The TiO2 nanotubes film annealed at 450°C has potential apply to LED devices.

Topics
Light emitting diodes, Optoelectronic devices, Electrical energy, Semiconductor materials, Thin films, Nanotubes, Transition metal oxides
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