Tunable charge trapping behavior of solution processed ZrO₂ (MOS) in presence of different optical illumination

This experiment demonstrates the tunable charge trapping behavior of fully solution processed ZrO₂ (MOS) in presence of different optical illumination. To ensure the tenability of charge trapping behavior, the capacitance voltage measurement was performed at frequency of 100 kHz with DC gate sweep voltage of ± 5V (with additional AC ∼ 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is observed that there is a large hysteresis in CV curve of 2.24V with trap charge density(n) of 1.42×10¹² cm⁻² due to presence of deep UV light. However, hysteresis degrades to 2.02V (n ∼ 1.34×10¹² cm⁻²) and 1.55V (n ∼ 1.03×10¹² cm⁻²) for illumination of white light and dark condition respectively. So, the charge trapping capability of ZrO₂ can be tuned up to 27% from dark to UV light illumination.