In this work we have reported generation of Black Silicon (Si) consisting of micro-groove structures. These micro- groove structures were produced on the monocrystalline Si surface by using 532-nm-wavelength nanosecond laser of 40 KHz repetition rate and 2 ns pulse duration. Field emission electron microscopy is done to characterize the morphology of the generated micro-groove structures. The reflectance of the Si surface containing these structures was measured by using a spectrophotometer attached with an integrating sphere within the wavelength range of 300-800 nm. From this study we found that the surface reflectance is reduced up to 4.5%. This significantly low reflectance of the Black Si surface makes them suitable for solar cell development application. The reported method for reduction of reflectance involves a single step dry etching process and is more advantageous to other methods in terms of less time consumption, reduced number of processing steps and costs effectiveness. Detail discussion is given on this regard.

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