This paper presents the microstructure properties of SiC thin films deposited at 300°C and 400°C using RF M agnetron sputtering on silicon wafer substrate. The microstructural properties are investigated for both the samples using X-Ray diffraction (XRD), Fourier transform Infrared spectroscopy (FTIR) and Atomic force microscopy (AFM). The XRD patterns of the SiC thin films show an increase in crystallite size and decrease in strain and dislocation density as deposition temperature increases. An FTIR spectrum shows the Si-C bonding of thin films. AFM investigations show an increase in grain size and decrease in average value of roughness as the deposition temperature is increased. SiC thin films deposited at 400°C exhibited improved microstructural properties.

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