We report on LPE growth and characterization of dilute nitride InGaAs(Sb)N layers nearly lattice matched to GaAs. In order to obtain high quality epitaxial layers without phase separation low-temperature variant of LPE method has been used. The composition and crystalline quality of the grown InGaAs(Sb)N layers have been determined by energy dispersive X-ray microanalysis and X-ray diffraction methods. SEM and AFM measurements on grown samples revealed flat interfaces and surface roughness in the range 0.2 - 0.3 nm. In order to identify the N-bonding mechanism in the alloys and the nature of nitrogen related clusters IR absorption and Raman scattering spectroscopy have been applied. The optical band gap of the samples is studied by photoluminescence (PL) spectroscopy at low and room temperatures and by surface photovoltage (SPV) spectroscopy at room temperature. The SPV and PL spectra reveal a red shift of the absorption edge and PL peak position as compared to GaAs, as well as localized states near the conduction band minimum. However, the optical band gap bowing of the samples appears smaller with respect to the random alloy, which is explained by the short-range ordering favored by LPE growth at near-equilibrium conditions. Variable angle ellipsometry is applied to determine the spectral behavior of the complex refractive index and estimate the band gap energy of the samples.
Skip Nav Destination
Article navigation
26 February 2019
10TH JUBILEE INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION
26–30 August 2018
Sofia, Bulgaria
Research Article|
February 26 2019
Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications
M. Milanova;
M. Milanova
a)
1
Central Laboratory of Applied Physics, Bulgarian Academy of Sciences
, 59 St. Petersburg blvd, 4000 Plovdiv, Bulgaria
a)Corresponding author: milanovam@yahoo.com
Search for other works by this author on:
V. Donchev;
V. Donchev
2
Faculty of Physics, Sofia University
, 5, J. Bourchier blvd., Sofia-1164, Bulgaria
Search for other works by this author on:
P. Terziyska;
P. Terziyska
3
Institute of Solid State Physics, Bulgarian Academy of Sciences
, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
Search for other works by this author on:
E. Valcheva;
E. Valcheva
2
Faculty of Physics, Sofia University
, 5, J. Bourchier blvd., Sofia-1164, Bulgaria
Search for other works by this author on:
S. Georgiev;
S. Georgiev
2
Faculty of Physics, Sofia University
, 5, J. Bourchier blvd., Sofia-1164, Bulgaria
Search for other works by this author on:
K. Kirilov;
K. Kirilov
2
Faculty of Physics, Sofia University
, 5, J. Bourchier blvd., Sofia-1164, Bulgaria
Search for other works by this author on:
I. Asenova;
I. Asenova
2
Faculty of Physics, Sofia University
, 5, J. Bourchier blvd., Sofia-1164, Bulgaria
Search for other works by this author on:
N. Shtinkov;
N. Shtinkov
4
Department of Physics, University of Ottawa
, Ottawa, ON, K1N 6N5, Canada
Search for other works by this author on:
Y. Karmakov;
Y. Karmakov
2
Faculty of Physics, Sofia University
, 5, J. Bourchier blvd., Sofia-1164, Bulgaria
Search for other works by this author on:
I. G. Ivanov
I. G. Ivanov
5
Linköping University, Department of Physics, Chemistry & Biology
, 581 83 Linköping, Sweden
Search for other works by this author on:
a)Corresponding author: milanovam@yahoo.com
AIP Conf. Proc. 2075, 140004 (2019)
Citation
M. Milanova, V. Donchev, P. Terziyska, E. Valcheva, S. Georgiev, K. Kirilov, I. Asenova, N. Shtinkov, Y. Karmakov, I. G. Ivanov; Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications. AIP Conf. Proc. 26 February 2019; 2075 (1): 140004. https://doi.org/10.1063/1.5091319
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. (February 2014)
Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells
J. Vac. Sci. Technol. B (February 2011)
Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
Appl. Phys. Lett. (March 2012)
InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
Journal of Applied Physics (September 2003)
Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment
Appl. Phys. Lett. (October 2014)