Wide band gap metal oxide semiconductors are an important material base in optoelectronic industry. Dye sensitized solar cells and especially the organometallic perovskite ones present a new way of application of these materials with specific requirements for their properties. Therefore the reduction of production costs in relation to the efficiency is an important factor for its commercialization. In this work we present sol-gel approach to form dense, uniform and voids free electron selective layers of intrinsic SnO2 for application in nano-sized organometallic photovoltaics. The purpose is to find conditions for deposition at lowest temperatures of compact and well crystallized SnO2 thin films with effective electron blocking ability with perspective to apply on polymer substrates. The process of pyrolysis of the precursors into expected SnO2 was investigated by Differential Scanning Calorimetry. The results were used to have an insight for main reaction steps and to define an adequate annealing regime. The films were characterized by X – ray – photoelectron spectroscopy XPS, diffractometry, UV – Vis spectrophotometry and Scanning Electron Microscopy. Different solvents for the precursor SnCl4.5H2O were investigated in order to minimize their influence onto polymeric substrates. In the row between ethanol, methanol and isopropanol the last ones yielded compact layers without pinholes and cracks. The level of electrical leakage was estimated by cyclic voltammetry measurements of residual current in aqueous redox solution. The quality of the coverage depends on the concentration of the precursor solution but at over 0.5 M SnCl4 the root mean squares (RMS) roughness of the films increases.
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26 February 2019
10TH JUBILEE INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION
26–30 August 2018
Sofia, Bulgaria
Research Article|
February 26 2019
Tin dioxide thin films deposited by sol – gel technique
Maxim Ganchev;
Maxim Ganchev
a)
1
Bulgarian Academy of Science, Central laboratory of solar energy and new energy sources
, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
a)Corresponding author: mganchev@gmail.com
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Atanas Katerski;
Atanas Katerski
b)
2
Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology
, Ehitajate tee 5, 19086 Tallinn, Estonia
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Stanka Stankova;
Stanka Stankova
1
Bulgarian Academy of Science, Central laboratory of solar energy and new energy sources
, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
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Jako Siim Eensalu;
Jako Siim Eensalu
2
Laboratory of Thin Film Chemical Technologies, Department of Materials and Environmental Technology, Tallinn University of Technology
, Ehitajate tee 5, 19086 Tallinn, Estonia
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Penka Terziyska;
Penka Terziyska
3
Solid State Physics Institute, Bulgarian Academy of Sciences
, 72 Tzarigradsko Chaussee Blvd, BG-1784 Sofia, Bulgaria
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Rositsa Gergova;
Rositsa Gergova
c)
1
Bulgarian Academy of Science, Central laboratory of solar energy and new energy sources
, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
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Hristosko Dikov;
Hristosko Dikov
1
Bulgarian Academy of Science, Central laboratory of solar energy and new energy sources
, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
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Georgi Popkirov;
Georgi Popkirov
d)
1
Bulgarian Academy of Science, Central laboratory of solar energy and new energy sources
, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
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Petko Vitanov
Petko Vitanov
e)
1
Bulgarian Academy of Science, Central laboratory of solar energy and new energy sources
, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
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AIP Conf. Proc. 2075, 140001 (2019)
Citation
Maxim Ganchev, Atanas Katerski, Stanka Stankova, Jako Siim Eensalu, Penka Terziyska, Rositsa Gergova, Hristosko Dikov, Georgi Popkirov, Petko Vitanov; Tin dioxide thin films deposited by sol – gel technique. AIP Conf. Proc. 26 February 2019; 2075 (1): 140001. https://doi.org/10.1063/1.5091316
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