A method for the study of nanoheterostructures transport properties in the direction of their growth is proposed. This technique is based on the dependence of cathodoluminescence generation area on the energy of electron beam. The size of cathodoluminescence generation area is determined by electron penetration interaction region and by transport of electron-hole pairs to the place of their recombination. Nanoheterostructures transport properties can be quantitatively compared for structures of different composition and design. The applicability of the method was demonstrated on the heterostructures ZnCdSSe.

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