In this work the possibility of thick GaN layers growth by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN buffer layers was demonstrated for the first time. Morphological and optical properties of the resulting structure are described.
The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers
R. Reznik, I. Soshnikov, S. Kukushkin, A. Osipov, V. Talalaev, G. Cirlin; The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers. AIP Conf. Proc. 15 January 2019; 2064 (1): 040004. https://doi.org/10.1063/1.5087683
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