In this paper, we present the results of an experimental study of the processes of local profiling of a material surface by a focused ion beam. The regularities of the influence of the main technological parameters of etching by the FIB method on the surface roughness of the substrate were established experimentally. It was revealed that the main factors affecting the formation of the surface relief of a solid when etched by a focused ion beam are: FIB overlap, the beam dwell time, and the ion beam current. It is shown that when the overlap is about 30-50%, the substrate roughness is minimal, and the FIB current and the beam dwell do not exert a determining influence on the roughness. The obtained results can be used to develop technological processes for the fabrication of the structures and elements for micro- and nanoelectronics.

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