The paper presents the results of the study of the effect of plasma etching of n-type silicon spin-coated with polystyrene balls on bulk silicon properties using careful surface chemical treatments and passivation. Plasma etching was carried out under different substrate temperatures (up to -140 °C). Photoluminescence decay time imaging was used to evaluate effective carrier lifetime in silicon samples after dry etching and a-Si:H passivation. According to the results obtained, plasma etching of n-Si(100) spin-coated with polystyrene balls within the temperature up to -140 °C in gas mixture of SF6/O2, RF and ICP plasma power of 30 W and 1000 W, respectively leads to minority carrier lifetime decrease. The difference in the rate of carrier lifetime degradation with etching time was found.
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15 January 2019
STATE-OF-THE-ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS, STRANN-2018
17–19 October 2018
Moscow, Russia
Research Article|
January 15 2019
Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures
Dmitry Kudryashov;
Dmitry Kudryashov
a)
1
St. Petersburg Academic University St. Petersburg
, Russia
a)Corresponding author: [email protected]
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Ivan Morozov;
Ivan Morozov
1
St. Petersburg Academic University St. Petersburg
, Russia
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Alexander Gudovskikh;
Alexander Gudovskikh
1
St. Petersburg Academic University St. Petersburg
, Russia
2
St. Petersburg Electrotechnical University “LETI”
, St. Petersburg, Russia
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Alexander Uvarov;
Alexander Uvarov
1
St. Petersburg Academic University St. Petersburg
, Russia
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Konstantin Kotlyar;
Konstantin Kotlyar
1
St. Petersburg Academic University St. Petersburg
, Russia
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Alexey Lihachev;
Alexey Lihachev
1
St. Petersburg Academic University St. Petersburg
, Russia
3
Ioffe Institute
, St. Petersburg, Russia
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Alexei Nashchekin;
Alexei Nashchekin
1
St. Petersburg Academic University St. Petersburg
, Russia
3
Ioffe Institute
, St. Petersburg, Russia
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Sergey Pavlov
Sergey Pavlov
3
Ioffe Institute
, St. Petersburg, Russia
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a)Corresponding author: [email protected]
AIP Conf. Proc. 2064, 030007 (2019)
Citation
Dmitry Kudryashov, Ivan Morozov, Alexander Gudovskikh, Alexander Uvarov, Konstantin Kotlyar, Alexey Lihachev, Alexei Nashchekin, Sergey Pavlov; Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures. AIP Conf. Proc. 15 January 2019; 2064 (1): 030007. https://doi.org/10.1063/1.5087669
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