The paper presents the results of the study of the effect of plasma etching of n-type silicon spin-coated with polystyrene balls on bulk silicon properties using careful surface chemical treatments and passivation. Plasma etching was carried out under different substrate temperatures (up to -140 °C). Photoluminescence decay time imaging was used to evaluate effective carrier lifetime in silicon samples after dry etching and a-Si:H passivation. According to the results obtained, plasma etching of n-Si(100) spin-coated with polystyrene balls within the temperature up to -140 °C in gas mixture of SF6/O2, RF and ICP plasma power of 30 W and 1000 W, respectively leads to minority carrier lifetime decrease. The difference in the rate of carrier lifetime degradation with etching time was found.
Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures
Dmitry Kudryashov, Ivan Morozov, Alexander Gudovskikh, Alexander Uvarov, Konstantin Kotlyar, Alexey Lihachev, Alexei Nashchekin, Sergey Pavlov; Influence of cryogenic dry etching on minority carriers lifetime in vertically aligned silicon nanostructures. AIP Conf. Proc. 15 January 2019; 2064 (1): 030007. https://doi.org/10.1063/1.5087669
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