InGaN/GaN QDs nanorod structure for the fabrication of light-emitting diodes by means of plasma-chemical etching is presented. Processes of the etching of nanorods and the defect passivation are studied. The obtained results can be used to create the light-emitting diode nanostructure with a greater efficiency compared to the classical planar technology.

Topics
Etching, Light emitting diodes, Nanorods, Semiconductors
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© 2019 Author(s).
2019
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