InGaN/GaN QDs nanorod structure for the fabrication of light-emitting diodes by means of plasma-chemical etching is presented. Processes of the etching of nanorods and the defect passivation are studied. The obtained results can be used to create the light-emitting diode nanostructure with a greater efficiency compared to the classical planar technology.
InGaN/GaN QDs nanorods for light emitters: Processing and properties
K. P. Kotlyar, I. A. Morozov, K. Yu. Shubina, T. N. Berezovskaya, A. S. Dragunova, N. V. Kryzhanovskaya, D. A. Kudryashov, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, G. E. Cirlin; InGaN/GaN QDs nanorods for light emitters: Processing and properties. AIP Conf. Proc. 15 January 2019; 2064 (1): 030006. https://doi.org/10.1063/1.5087668
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