We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. We use scanning tunneling microscopy and Kelvin probe force microscopy in order to obtain measurements of the local density of states, work function and nature of defects in MoS2 films. We track the evolution of defects that are formed under annealing in ultra-high vacuum conditions. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS2. The results provide estimates of the thermal budgets available for reliable fabrication of MoS2-based integrated circuit electronics and indicate the importance of defect control and layer passivation.
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16 August 2018
ADVANCED MATERIALS: Proceedings of the International Workshop on Advanced Materials (IWAM-2017)
19–21 December 2017
Berhampur, Odisha, India
Research Article|
August 16 2018
Metastable defects in monolayer and few-layer films of MoS2
M. Precner;
M. Precner
1
Department of Physics, Drexel University
, Philadelphia, PA 19104, USA
3
Institute of Electrical Engineering, Slovak Academy of Sciences
, Bratislava 841 04, Slovak Republic
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T. Polaković;
T. Polaković
1
Department of Physics, Drexel University
, Philadelphia, PA 19104, USA
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D. J. Trainer;
D. J. Trainer
2
Department of Physics, Temple University
, Philadelphia, PA 19122, USA
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A. V. Putilov;
A. V. Putilov
2
Department of Physics, Temple University
, Philadelphia, PA 19122, USA
5Present address:
Institute for Physics of Microstructures RAS
, Nizhny Novgorod, GSP-105, Russia
603950
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C. Di Giorgio;
C. Di Giorgio
2
Department of Physics, Temple University
, Philadelphia, PA 19122, USA
6Present address:
E.R. Caianiello Physics Department and NANOMATES, Research Centre for Nanomaterials and Nanotechnology, University of Salerno
, Fisciano (SA), Italy
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I. Cone;
I. Cone
2
Department of Physics, Temple University
, Philadelphia, PA 19122, USA
4
Department of Physics, University of San Francisco
, 2130 Fulton St., San Francisco, CA 94117, USA
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X. X. Xi;
X. X. Xi
2
Department of Physics, Temple University
, Philadelphia, PA 19122, USA
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M. Iavarone;
M. Iavarone
2
Department of Physics, Temple University
, Philadelphia, PA 19122, USA
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G. Karapetrov
G. Karapetrov
a)
1
Department of Physics, Drexel University
, Philadelphia, PA 19104, USA
a)Corresponding author: goran@drexel.edu
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a)Corresponding author: goran@drexel.edu
AIP Conf. Proc. 2005, 020004 (2018)
Citation
M. Precner, T. Polaković, D. J. Trainer, A. V. Putilov, C. Di Giorgio, I. Cone, X. X. Xi, M. Iavarone, G. Karapetrov; Metastable defects in monolayer and few-layer films of MoS2. AIP Conf. Proc. 16 August 2018; 2005 (1): 020004. https://doi.org/10.1063/1.5050721
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