X‐Ray Photoelectron Study of $SiO$

The structure of amorphous $SiO$ thin film is investigated by means of X‐ray photoelectron spectroscopy. Core electronbinding energies are determined for Si, $SiO$ and $SiO2$⁠. The problems of charging effects and reference level are discussed. Chemical shifts of Si2p and Si2s electrons are reported for these compounds. For $SiO$ the Si photoelectron lines show a doublet structure. It is demonstrated that $SiO$ is not a mixture of Si and $SiO2$ but may have a definite structure with two unequivalent chemical sites for Si. These ESCA results are interpreted according to the molecular structure model of $SiO$ suggested by other physical properties.