In this work, we design and analyze the Cu(In,Ga)Se2 (CIGS) solar cell using simulation software “Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D)”. The conventional CIGS solar cell uses various layers, like intrinsic ZnO/Aluminium doped ZnO as transparent oxide, antireflection layer MgF2, and electron back reflection (EBR) layer at CIGS/Mo interface for good power conversion efficiency. We replace this conventional model by a simple model which is easy to fabricate and also reduces the cost of this cell because of use of lesser materials. The new designed model of CIGS solar cell is ITO/CIGS/OVC/CdS/Metal contact, where OVC is ordered vacancy compound. From this simple structure, even at very low illumination we are getting good results. We simulate this CIGS solar cell model by varying various physical parameters of CIGS like thickness, carrier density, band gap and temperature.
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8 May 2018
2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017)
24–25 November 2017
Bikaner, India
Research Article|
May 08 2018
Numerical modelling of CIGS/CdS solar cell
Nisha Devi;
Nisha Devi
b)
1
Solar Photovoltaic Lab, Department of Physics
, Jamia Millia Islamia, New Delhi-110025, India
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Anver Aziz;
Anver Aziz
a)
1
Solar Photovoltaic Lab, Department of Physics
, Jamia Millia Islamia, New Delhi-110025, India
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Shouvik Datta
Shouvik Datta
2
Department of Physics, IISER-Pune
, Dr. Homi Bhabha road, Pashan, Pune-411008, India
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AIP Conf. Proc. 1953, 100031 (2018)
Citation
Nisha Devi, Anver Aziz, Shouvik Datta; Numerical modelling of CIGS/CdS solar cell. AIP Conf. Proc. 8 May 2018; 1953 (1): 100031. https://doi.org/10.1063/1.5032967
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