Pressure dependent Gruneisen parameter for semiconductors Available to Purchase

Better applications of semiconducting materials in the modern technology need the studies of its Gruneisen Parameter. In fact it provides the information about lattice anharmonicity which helps in fundamental understanding of the interaction of phonons and elastic constants of semiconducting materials. It also provides deep insight in the investigation of novel heterostructures. In the present work an attempt has been made for theoretical prediction of pressure dependent Gruneisen Parameter for Germanium semiconducting crystal at reference temperature 295 K and compression V/V0 = 1 to V/V0 = 0.1, by using Vaschenko and Zubarev formulation of the Grüneisen parameter γ and three different isothermal EOS viz. Brennan-Stacey EOS, Shanker EOS and Vinet EOS. The obtained results are compared with available experimental evidences which reveal that Brennan – Stacey EOS is best suited EOS for theoretical prediction of compression for semiconductors at different pressure ranges.