We perform a single-shot IR nanosecond laser processing of commercial silicon wafers in ambient air and under a 2 mm thick carbon disulfide liquid layer. We characterize the surface spots modified in the liquid ambient and the spots ablated under the same conditions in air in terms of its surface topography, chemical composition, band-structure modification, and crystalline structure by means of SEM and EDX microscopy, as well as of FT-IR and Raman spectroscopy. These studies indicate that single-step microstructuring and deep (up to 2-3% on the surface) hyperdoping of the crystalline silicon in its submicron surface layer, preserving via pulsed laser annealing its crystallinity and providing high (103 - 104 cm−1) spectrally at near- and mid-IR absorption coefficients, can be obtained in this novel approach, which is very promising for thin - film silicon photovoltaic devices

1.
W.
Shockley
and
H. J.
Quiesser
,
J. Appl. Phys.
,
32
,
510
(
1961
).
2.
T.
Trupke
,
A.
Shalav
,
B. S.
Richards
, et al,
Sol. Energy Mater. Sol. Cells
,
90
,
3327
(
2006
).
3.
A.
Luque
and
A.
Marti
,
Phys. Rev. Lett.
,
78
,
5014
(
1997
).
4.
W.
Zou
,
C.
Visser
,
J. A.
Maduro
, et al,
Nature Photon.
,
6
,
560
(
2012
).
5.
Y.
Okada
,
N. J.
Ekins-Daukes
,
T.
Kita
, et al,
Appl. Phys. Rev.
,
2
,
021302
(
2015
).
6.
C. H.
Crouch
,
J. E.
Carey
,
M.
Shen
, et al,
Appl. Phys. A
,
79
,
1635
(
2004
).
7.
I.
Umezu
,
J. M.
Warrender
,
S.
Charvanichborikarn
, et al,
J. Appl. Phys.
,
113
,
213501
(
2013
).
8.
B. K.
Newman
,
M.-J.
Sher
,
E.
Mazur
, and
T.
Buonassisi
,
Appl. Phys. Lett.
,
98
,
251905
(
2011
).
9.
B.
Franta
,
D.
Pastor
,
H. H.
Gandhi
, et al,
J. Appl. Phys.
,
118
,
225303
(
2015
).
10.
D. A.
Zayarny
,
A. A.
Ionin
,
I. V.
Kiseleva
, et al,
JETP Lett.
,
100
,
295
(
2014
).
11.
K.-M.
Guenther
,
T.
Gimpel
,
J. W.
Tomm
, et al,
Appl. Phys. Lett.
,
104
,
042107
(
2014
).
12.
M. T.
Winkler
,
D.
Recht
,
M. J.
Sher
, et al,
Phys. Rev. Lett.
,
106
,
178701
(
2011
).
13.
A.
Dargys
and
J.
Kundrotas
,
Handbook on Physical Properties of Ge, Si, GaAs, and InP [in Russian]
,
Science and Encyclopaedia Publishers
,
Vilnius
(
1994
).
14.
K.
Kanaya
and
S.
Okayama
,
J. Phys. D: Appl. Phys.
,
5
,
43
(
1972
).
15.
K-M.
Guenther
,
T.
Gimpel
,
S.
Kontermann
, and
W.
Schade
,
Appl. Phys. Lett.
,
102
,
202104
(
2013
).
16.
M.-J.
Sher
,
M. T.
Winkler
, and
E.
Mazur
,
MRS Bull.
,
36
,
439
(
2011
).
17.
A. A.
Ionin
,
S. I.
Kudryashov
,
L. V.
Seleznev
, et al,
J. Exp. Theor. Phys.
,
116
,
347
(
2013
).
18.
B. R.
Tull
,
M. T.
Winkler
, and
E.
Mazur
,
Appl. Phys. A
,
96
,
327
(
2009
).
19.
H. G.
Grimmeiss
,
E.
Janzen
, and
B.
Skarstam
,
J. Appl. Phys.
,
51
,
4212
(
1980
).
20.
E.
Janzen
,
R.
Stemann
,
G.
Grossmann
, and
H. G.
Grimmeiss
,
Phys. Rev. B
,
29
,
1907
(
1984
).
21.
R. A.
Faulkner
,
Phys. Rev.
,
184
,
713
(
1969
).
This content is only available via PDF.
You do not currently have access to this content.