In this paper, ZnO thin films with an Al content of 2% on glass substrates were grown by RF magnetron sputtering. The films were prepared at different thicknesses of 220, 330, 370, 460 and 580 nm. The effect of film thickness on the structural, electrical and optical properties of the film was investigated for opto-electronic applications. Lower resistivity of 6.1 Ωcm and larger grain size of 58 nm were obtained under layer thickness of 220 nm and 370 nm, respectively. The band gap does not have a considerable change except a little reduction at the highest film thickness of 580 nm. The material produced with the optimal growth parameters have high transparencies of around 85 %.

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