In this present work the characteristics of Chromium nitride (CrN) thin films on Silicon substrate were investigated as function of Nitrogen gas flow rate. Chromium nitride (CrN) thin films were fabricated on single crystal silicon substrates by using the reactive ion beam sputtering at room temperature. Effect of N2 gas flow on microstructure, surface roughness and density were investigated by GIXRR and GIXRD by depositing [CrN]x4 films at various N2 gas flow from 1sccm to 4sccm while keeping the Ar flow constant at 2.5 sccm. The effects of N2 gas flows on the deposition rate showed that the deposition rate decreases with the increase of nitrogen gas flow. X-ray study shows that the surface roughness and density of the CrN films increases with the increase of N2 gas flows. It is suggested that the ion and particles bombardment at low gas pressures cause a smoother surface.
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19 May 2017
DAE SOLID STATE PHYSICS SYMPOSIUM 2016
26–30 December 2016
Bhubaneswar, Odisha, India
Research Article|
May 19 2017
Deposition and characterization of CrN thin films by reactive ion beam sputtering Available to Purchase
Rajnish Dhawan;
Rajnish Dhawan
*
X-ray optics Section, Indus Synchrotron Utilization Division,
Raja Ramanna Center for Advanced Technology
, Indore-452013, India
Search for other works by this author on:
Sanjay Rai
Sanjay Rai
X-ray optics Section, Indus Synchrotron Utilization Division,
Raja Ramanna Center for Advanced Technology
, Indore-452013, India
Search for other works by this author on:
Rajnish Dhawan
*
X-ray optics Section, Indus Synchrotron Utilization Division,
Raja Ramanna Center for Advanced Technology
, Indore-452013, India
Sanjay Rai
X-ray optics Section, Indus Synchrotron Utilization Division,
Raja Ramanna Center for Advanced Technology
, Indore-452013, India
*
Email: [email protected]
AIP Conf. Proc. 1832, 080073 (2017)
Citation
Rajnish Dhawan, Sanjay Rai; Deposition and characterization of CrN thin films by reactive ion beam sputtering. AIP Conf. Proc. 19 May 2017; 1832 (1): 080073. https://doi.org/10.1063/1.4980533
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