A mathematical model of recombination radiation transfer in multilayer heterostructures for calculating photoluminescent coupling transfer function has been developed. The photoluminescent coupling effectiveness for the GaInP-GaInAs and GaInAs-Ge subcell pairs being a part of multijunction GaInP/GaInAs/Ge SCs has been investigated. The simulation results were compared with experimental data. The electroluminescence effectiveness estimation for a wide band gap subcell in each pair has been performed. An anomalously high value of the photoluminescent coupling for the GaInAs-Ge subcell pair has been observed.

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