We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 1014 cm−2 to 1017 cm−2 was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.
REFERENCES
1.
F.
Schrempel
, Th.
Gischkat
, H.
Hartung
, Nucl. Instr. and Meth.in Phys. Res. B
250
164
–168
(2006
)2.
T.
Sadoh
, H.
Eguchi
, A.
Kenjo
, M.
Miyao
, Nucl. Instr. and Meth.in Phys. Res. B
206
478
–481
(2003
)3.
X.
Dongzhu
, Z.
Dezhang
, P.
Haochang
, J. Phys. D: Appl. Phys.
31
1647
–1651
(1998
)4.
S.
Waid
, H. D.
Wanzenboeck
, M.
Muehlberger
, Microelectronic Engineering
97
105
–108
(2012
)5.
M.
Rumler
, R.
Fader
, A.
Haas
, Nanotechnology
24
365302
(2013
)6.
V. N.
Tondare
, J. Vac. Sci. Technol. A
23
(6
) 1498
–1508
(2005
)7.
J.
Notte
, R.
Hill
, S.
McVey
, Microscopy and Microanalysis
12
126
–127
(2006
)8.
B.W.
Ward
, J.A.
Notte
, N.P.
Economou
, J. Vac. Sci. Technol. B
24
(6
) 2871
–2874
(2006
)9.
M. S.
Joens
, C.
Huynh
, J.M.
Kasuboski
, D.
Ferranti
, Y.J.
Sigal
, F.
Zeitvogel
, M.
Obst
, C.J.
Burkhardt
, K.P.
Curran
, S.H.
Chalasani
, L.A.
Stern
, B.
Goetze
and J.A.J.
Fitzpatrick
. Scientific Reports
3
, 3514
(2013
)10.
A.I.
Kuznetsov
, A.E.
Miroshnichenko
, Y.H.
Fu
, V.
Viswanathan
, M.
Rahmani
,V.
Valuckas
, Z. Y.
Pan
, Y.
Kivshar
, D.S.
Pickard
& B.
Luk’yanchuk
. Nature Communications
5
:3104
(2014
)11.
D. C.
Bell
, M. C.
Lemme
, L. A.
Stern
, Nanotechnology
20
455301
(2009
)12.
N.
Kalhor
, S.A.
Boden
, H.
Mizuta
. Microelectronic Engineering
114
70
–77
(2014
)13.
P.
Chen
, E.
van Veldhoven
, C. A.
Sanford
, H.W.M.
Salemink
, D.J.
Maas
, D. A.
Smith
, P.D.
Rack
and P.F.A.
Alkemade
, Nanotechnology
21
455302
(2010
)14.
V.
Sidorkin
, E.
van Veldhoven
, E.
van der Drift
, J. Vac. Sci. Technol. B
27
(4
) L18
(2009
)15.
Y.V.
Petrov
and O.F.
Vyvenko
, Beilstein J. Nanotechnol.
6
, 1125
–1137
(2015
)16.
V. Yu.
Mikhailovskii
, Yu. V.
Petrov
, O. F.
Vyvenko
. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
9
(1
) 196
–202
(2015
)17.
S.A.
Cybart
, E.Y.
Cho
, T.J.
Wong
, B.H.
Wehlin
, M.K.
Ma
, C.
Huynh
and R. C.
Dynes
, Nature Nanotechnology
10
598
–602
(2015
)18.
N.
Klingner
, R.
Heller
, G.
Hlawacek
, J.
von Borany
, J.
Notte
, J.
Huang
, S.
Facsko
, Ultramicroscopy
162
91
–97
(2016
)19.
V.
Veligura
, G.
Hlawacek
, U.
Jahn
, R.l
van Gastel
, H. J. W.
Zandvliet
and B.
Poelsema
, Journal of Applied Physics
115
183502
(2014
)20.
Yu.V.
Petrov
, T.V.
Sharov
, A.P.
Baraban
, O.F.
Vyvenko
. Nuclear Instruments and Methods in Physics Research B
349
90
–95
(2015
)21.
Yu.V.
Kapionov
, P.Yu.
Shapochkin
, L.Yu.
Beliaev
, Yu.V.
Petrov
, Yu.P.
Efimov
, S.A.
Eliseev
, V.A.
Lovtcius
, V.V.
Petrov
, and V.V.
Ovsyankin
, Optics Letters
41
(1
) 104
–106
(2016
)22.
H.-Y.
Lee
, S.-W.
Paek
and H.-B.
Chung
. Jpn. J. Appl. Phys
37
6792
–6796
(1998
)23.
M.M.
Alkais
, R.J.
Blaikie
, S.J.
McNab
. Microelectronic Engineering
57–58
367
–373
(2001
)24.
A.
Sischka
, L.
Galla
, A. J.
Meyer
, A.
Spiering
, S.
Knust
, M.
Mayer
, A. R.
Hall
, A.
Beyer
, P.
Reimann
, A.
Gölzhäusere
and D.
Anselmettia
, Analyst
140
4843
(2014
)25.
J. F.
Ziegler
, M.D.
Ziegler
, J.P.
Biersack
, Nucl. Instr. and Meth. in Phys. Res. B
268
1818
–1823
(2010
)26.
R.
Menzel
, K.
Gartner
, W.
Wescha
and H.
Hobert
. J. Appl. Phys.
88
(10
) 15
(2000
)
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