ZnO thin films doped with various amounts of In impurities were prepared by magnetron sputtering at a substrate temperature of 150°C. The shift in optical bandgap of the In-doped ZnO films is studied as a function of carrier concentration. Nominally doped ZnO films exhibit an increase in the measured optical band gap known as the Burstein-Moss effect. Dominant band gap narrowing is observed with increased doping. XPS and TOFSIMS analyses confirm that In is incorporated in the ZnO material. The In 3d peaks show that no metallic In is present as a result of heavy doping. The XRD phase analysis shows a preferential c-axis growth but a shift of the ZnO (002) peak to lower 2-theta values with increasing FWHM as the carrier concentration increases indicates the decline in the quality of crystallinity. An elongation of the c lattice constant is also observed and is likely to be caused by intersitital In as the amount of In dopants increases. The incorporation of In induces a semiconductor-metal transition between the carrier concentrations of 3.58 – 5.61×1019 cm−3 and structural changes in the ZnO host material.
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6 July 2016
INTERNATIONAL CONFERENCE ON NANO-ELECTRONIC TECHNOLOGY DEVICES AND MATERIALS 2015 (IC-NET 2015)
27 February–2 March 2015
Selangor, Malaysia
Research Article|
July 06 2016
Insights on semiconductor-metal transition in indium-doped zinc oxide from x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and x-ray diffraction
K. G. Saw;
K. G. Saw
a)
1Physics Programme, School of Distance Education,
Universiti Sains Malaysia
, 11800 Penang, Malaysia
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N. M. Aznan;
N. M. Aznan
b)
1Physics Programme, School of Distance Education,
Universiti Sains Malaysia
, 11800 Penang, Malaysia
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F. K. Yam;
F. K. Yam
c)
2Nano-optoelectronics Research Laboratory,
Universiti Sains Malaysia
, 11800 Penang, Malaysia
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S. S. Ng;
S. S. Ng
d)
2Nano-optoelectronics Research Laboratory,
Universiti Sains Malaysia
, 11800 Penang, Malaysia
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S. Y. Pung
S. Y. Pung
e)
3School of Materials and Mineral Resources Eng.,
Universiti Sains Malaysia
, 14300 Nibong Tebal, Malaysia
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a)
Corresponding author: [email protected]
AIP Conf. Proc. 1733, 020033 (2016)
Citation
K. G. Saw, N. M. Aznan, F. K. Yam, S. S. Ng, S. Y. Pung; Insights on semiconductor-metal transition in indium-doped zinc oxide from x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry and x-ray diffraction. AIP Conf. Proc. 6 July 2016; 1733 (1): 020033. https://doi.org/10.1063/1.4948851
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