Highly reliable spin-coated titanium dioxide dielectric

Dielectric degradation as low as 0.3 % has been observed for a highly reliable Titanium dioxide (TiO₂) film after constant voltage stressing (CVS) with – 4 V for 10⁵ second at room temperature (300 K). The film was fabricated by sol –gel spin – coating method on a lightly doped p-Si (~10¹⁵ cm⁻³) substrate. The equivalent oxide thickness (EOT) is 7 nm with a dielectric constant 33 (at 1 MHz). Metal – Oxide – Semiconductor (MOS) capacitors have been fabricated with an optimum annealing temperature of 800°C for one hour in a preheated furnace. The dielectric degradation is annealing temperature dependent. A degradation of 1.4 %, 1.2 % and 1.1 % has been observed for 400°C, 600°C and 1000°C temperature annealed MOS respectively. The dielectric degradation increases below or above the optimum temperature of annealing.