We study optical properties of Ta-doped TiO2 thin film on LaAlO3 substrate using spectroscopy ellipsometry (SE) analysis at energy range of 0.5 – 6.5 eV. Room temperature SE data for Ψ (amplitude ratio) and Δ (phase difference) between p- and s- polarized light waves are taken with multiple incident angles at several spots on the samples. Here, absorption coefficient has been extracted from SE measurements at photon incident angle of 70° for different Ta concentration (0.01, 0.4, and 5 at. %). Multilayer modelling is performed which takes into account reflections at each interface through Fresnel coefficients to obtain reasonably well the fitting of Ψ and Δ data simultaneously. As the results, we estimate that film thickness increases by increasing Ta concentration accompanied by the formation of a new electronic structure. By increasing Ta impurities, the blueshift of absorption coefficient (α) peaks is observable. This result indicates that TiO2 thin film becomes optically resistive by introducing Ta doping. Schematic model of interband transition inTiO2:Ta will be proposed base on obtained optical properties. This study enables us to predict the role of Ta doping on the electronic and optical band structures of TiO2 thin film.

Due to a processing error by AIP Publishing, an incorrect version of the above article was published on 30 September 2015 that omitted the name of author Toto Winata. AIP Publishing apologizes for this error. All online versions of the article were corrected on 7 October 2015. The author names and affiliations appear correctly above.

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