Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.
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28 August 2015
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015): 4th National Conference on Advanced Materials and Radiation Physics
13–14 March 2015
Longowal, India
Research Article|
August 28 2015
Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT
Shubhankar Majumdar;
Shubhankar Majumdar
a)
1Advanced Development Technology Centre,
Indian Institute of Technology Kharagpur
, Kharagpur, West Bengal, 721302, India
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S. Das;
S. Das
1Advanced Development Technology Centre,
Indian Institute of Technology Kharagpur
, Kharagpur, West Bengal, 721302, India
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D. Biswas
D. Biswas
2Dept. of Electronics and Electrical Communication Engineering,
Indian Institute of Technology Kharagpur
, Kharagpur, West Bengal, 721302, India
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Shubhankar Majumdar
1,a)
S. Das
1
D. Biswas
2
1Advanced Development Technology Centre,
Indian Institute of Technology Kharagpur
, Kharagpur, West Bengal, 721302, India
2Dept. of Electronics and Electrical Communication Engineering,
Indian Institute of Technology Kharagpur
, Kharagpur, West Bengal, 721302, India
a)
Corresponding author: [email protected]
AIP Conf. Proc. 1675, 020021 (2015)
Citation
Shubhankar Majumdar, S. Das, D. Biswas; Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT. AIP Conf. Proc. 28 August 2015; 1675 (1): 020021. https://doi.org/10.1063/1.4929179
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