Physics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity of the device. Here the surface and heterointerface properties are greatly exploited. The dependence of two dimensional electron gas (2DEG) upon the surface charges is mainly utilized. The simulation of Schottky diode has been done in Technology Computer Aided Design (TCAD) tool and I-V curves are generated, from the I-V curves 76% response has been recorded in presence of 500 ppm gas at a biasing voltage of 0.95 Volt.
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