A transparent p-type thin film CuGaO2 was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10−2 Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. The details of the results will be discussed in the conference.

1.
C.-T.
Su
,
H.-Y.
Lee
,
B.-K.
Wu
, and
M.-Y.
Chern
,
J. Cryst. Growth
, vol.
328
,
25
29
(
2011
).
2.
H.
Hosono
,
H.
Ohta
,
K.
Hayashi
,
M.
Orita
, and
M.
Hirano
, vol.
239
,
496
502
(
2002
)
3.
A.
Alias
,
K. A.
Mohamad
,
B. K.
Gosh
,
M.
Sakamoto
, and
K.
Uesugi
, no.
Ii
,
763
765
(
2012
).
4.
S.
Kim
,
H.
Seok
,
H.
Lee
,
M.
Lee
,
D.
Choi
, and
K.
Chai
,
Ceram. Int.
, vol.
38
,
S623
S626
(
2012
).
5.
J. D.
Jin
,
Y.
Luo
,
P.
Bao
,
C.
Brox-Nilsen
,
R.
Potter
, and
a. M.
Song
, vol.
552
,
192
195
(
2014
).
6.
R.
Brahimi
,
Y.
Bessekhouad
,
A.
Bouguelia
, and
M.
Trari
, vol.
186
,
242
247
(
2007
).
7.
C.-Y.
Tsay
,
K.-S.
Fan
,
S.-H.
Chen
, and
C.-H.
Tsai
, vol.
495
, no.
1
,
126
130
(
2010
).
8.
M.-M.
Bagheri-Mohagheghi
and
M.
Shokooh-Saremi
,
Semicond. Sci. Technol.
, vol.
19
,
764
769
(
2004
).
9.
M. H. Z.
Maha
, vol.
055701
,
86
(
2012
).
10.
Y. J.
Zhang
,
Z. T.
Liu
,
D. Y.
Zang
,
X. S.
Che
,
L. P.
Feng
, and
X. X.
Bai
,
J. Phys. Chem. Solids
, vol.
74
,
1672
1677
(
2013
).
11.
a. S.
Reddy
,
H.-H.
Park
,
G. M.
Rao
,
S.
Uthanna
, and
P. S.
Reddy
,
J. Alloys Compd.
, vol.
474
,
401
405
, (
2009
).
12.
M.
Sasaki
and
M.
Shimode
,
J. Phys. Chem. Solids
, vol.
64
,
1675
1679
, (
2003
).
13.
H.
Yanagi
,
H.
Kaw
,
A.
Kudo
,
M.
Yasukaw
, and
H.
Hosono
,
Electroceramics
,
407
414
, (
2000
).
This content is only available via PDF.
You do not currently have access to this content.