The nanostructured porous silicon (PS) samples were prepared by electrochemical anodic dissolution of doped silicon (p-Si) for (100) orientations for different HF concentrations of 40% and 48% for constant current density 30mA/cm2 and etching times 10, 20, 40 and 60 min. Then these samples were sensitized with chloroaluminium phthalocyanine (ClAlPc) to fabricate Dye-sensitized solar cells (DSSCs). The bandgap measurements from UV-Vis and photoluminescence measurements are in the range of 1.5 to 1.8 eV. The photocurrent and photovoltage of the cells were measured using Keithely source meter. The maximum conversion efficiency of 2.8% is observed and discussed.
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