Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%.
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16 April 2015
THE 5TH ASIAN PHYSICS SYMPOSIUM (APS 2012)
10–12 July 2012
Bandung, Indonesia
Research Article|
April 16 2015
Intermediate band solar cell simulation use InAs quantum dot in GaAs
I. B. Hendra P.;
I. B. Hendra P.
*
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division Department of Physics,
Institut Teknologi Bandung
, Indonesia
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F. Rahayu;
F. Rahayu
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division Department of Physics,
Institut Teknologi Bandung
, Indonesia
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M. F. Sahdan;
M. F. Sahdan
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division Department of Physics,
Institut Teknologi Bandung
, Indonesia
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Y. Darma
Y. Darma
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division Department of Physics,
Institut Teknologi Bandung
, Indonesia
Search for other works by this author on:
I. B. Hendra P.
*
F. Rahayu
M. F. Sahdan
Y. Darma
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division Department of Physics,
Institut Teknologi Bandung
, Indonesia
*
E-mail: [email protected]
AIP Conf. Proc. 1656, 060001 (2015)
Citation
I. B. Hendra P., F. Rahayu, M. F. Sahdan, Y. Darma; Intermediate band solar cell simulation use InAs quantum dot in GaAs. AIP Conf. Proc. 16 April 2015; 1656 (1): 060001. https://doi.org/10.1063/1.4917132
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