In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.
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16 April 2015
THE 5TH ASIAN PHYSICS SYMPOSIUM (APS 2012)
10–12 July 2012
Bandung, Indonesia
Research Article|
April 16 2015
Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering
A. S. Aji;
A. S. Aji
*
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics,
Institut Teknologi Bandung
, Indonesia
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M. F. Sahdan;
M. F. Sahdan
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics,
Institut Teknologi Bandung
, Indonesia
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I. B. Hendra;
I. B. Hendra
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics,
Institut Teknologi Bandung
, Indonesia
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P. Dinari;
P. Dinari
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics,
Institut Teknologi Bandung
, Indonesia
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Y. Darma
Y. Darma
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics,
Institut Teknologi Bandung
, Indonesia
Search for other works by this author on:
A. S. Aji
*
M. F. Sahdan
I. B. Hendra
P. Dinari
Y. Darma
Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics,
Institut Teknologi Bandung
, Indonesia
*
Email: [email protected]
AIP Conf. Proc. 1656, 030009 (2015)
Citation
A. S. Aji, M. F. Sahdan, I. B. Hendra, P. Dinari, Y. Darma; Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering. AIP Conf. Proc. 16 April 2015; 1656 (1): 030009. https://doi.org/10.1063/1.4917098
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