In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

1.
A.S.
Aji
and
Y.
Darma
,
AIP Conf. Proc.
1454
,
195
(
2012
).
2.
B. Q.
Wei
, et al,
Nature
.
416
,
495
(
2002
).
3.
Schlittler
,
R. R.
 et al 
Science
.
292
,
1136
1139
(
2001
).
4.
W.
Kern
,
D. A.
Puotinen
;
RCA Rev.
31
,
187
(
1970
).
5.
M.
Grundner
and
H.
Jacob
,
App. Phys. A
39
,
73
(
1986
).
6.
Q. Y.
Tong
,
H. M.
You
,
G.
Cha
, and
U.
Gösele
,
Appl. Phys. Lett.
62
,
970
(
1993
).
7.
G.
Polupan
and
T. V.
Tortchynska
,
Thin Solid Films
518
,
S208
(
2010
).
8.
V. B.
Shuman
and
N. S.
Savkina
,
Tech. Phys. Lett.
30
,
572
(
2004
).
9.
R. V.
Konakova
, et al 
SEMICONDUCTORS
.
46
,
9
(
2012
).
This content is only available via PDF.
You do not currently have access to this content.