Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a $GaAs/Al0.3Ga0.7As$ quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.