Carbon film deposition on $SnO2/Si(111)$ using DC unbalanced magnetron sputtering Available to Purchase

In this paper, carbon deposition on $SnO2$ layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10⁻² Torr by keeping the substrate temperature at 300 °C. $SnO2$ were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of $SnO2$ on Si(111) and the characteristic of carbon thin film on $SnO2$ were analized by mean XRD, FTIR and Raman spectra. XRD analysis shows that $SnO2$ film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on $SnO2$⁠. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.