Fabrication of multiple layer graphene films on $Cu/SiO2/Si$ substrate by hot-filament chemical vapor deposition

We report the fabrication of multiple layer graphene films on Cu coated $SiO2/Si$ substrate using an in-house developed hot-filament chemical vapor deposition reactor, which relies on vertical mass flow with respect to the substrate configuration. Scanning electron microscopy, atomic force microscopy and Raman spectroscopy were used to characterize the as-prepared multi-layer graphene film. The presence of D, G and 2D Raman bands at 1348, 1605 and 2700 cm⁻¹, respectively confirm the presence of graphene like structure on the substrate.