Organic field effect transistor with conductivity enhanced PEDOT: PSS composite electrodes

Polymer based organic field effect transistor (OFET) has drawn great attention due to their flexibility, performance and applications. Here an attempt has been made to fabricate PEDOT: PSS (poly (3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)) based OFET with a bottom contact top gate architecture . While PEDOTPSS is used as channel material, a modified form of PEDOT: PSS doped with semiconducting rubber is used as source/drain materials. PMMA and Al are employed as the dielectric and gate electrode respectively. The simple low cost device structure had shown a comparable mobility (μ) value (0.025 cm²/vs.) and threshold voltage of −10.6V with those reported for PEDOTPSS with metallic source/drain. However the on /off ratio recorded a very low value of 10 compared to much higher order that reported for metallic source/drain.