Two RF power MOSFETs of equal power rating and operating frequency in two different technologies one in Laterally Diffused MOS (LDMOS) and another in Vertically Diffused MOS (VDMOS) have been used to study the RF performances. Power amplifiers have been simulated and experimented using these technologies. Performance comparison has been made between these two types of RF power amplifiers. Amplifier built over LDMOS has higher gain and efficiency compared to amplifier built with VDMOS.

Topics
Field effect transistors, Amplifiers, Metal-oxide-semiconductor
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© 2013 American Institute of Physics.
2013
American Institute of Physics
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