A multi-cusp ion source was designed for Nissin ion doping system "iG5" developed for GEN5.5 processes. It has many points of similarity to iG4 ion source. The extraction area and the internal volume of the plasma chamber are scaled up. And the method to obtain high current B+ beams is same as iG4 ion source. On the other hand, iG5 ion source has an added feature on the extraction system. We use new developed multi-slit extraction system to obtain stable beams with small divergence. The target boron beam current density of 1mA/cm (that is 130mA) was obtained.

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