In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of ∼180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles.
Skip Nav Destination
Article navigation
6 November 2012
ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology
25–29 June 2012
Valladolid, Spain
Research Article|
November 06 2012
Modeling boron profiles in silicon after pulsed excimer laser annealing
M. Hackenberg;
M. Hackenberg
Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen,
Germany
Search for other works by this author on:
K. Huet;
K. Huet
Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers,
France
Search for other works by this author on:
R. Negru;
R. Negru
Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers,
France
Search for other works by this author on:
J. Venturini;
J. Venturini
Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers,
France
Search for other works by this author on:
G. Fisicaro;
G. Fisicaro
CNR IMM, Z.I VIII Strada 5, 95121 Catania,
Italy
Search for other works by this author on:
A. La Magna;
A. La Magna
CNR IMM, Z.I VIII Strada 5, 95121 Catania,
Italy
Search for other works by this author on:
P. Pichler
P. Pichler
Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany, and Chair of Electron Devices, University of Erlangen-Nürnberg, Cauerstrasse 6, 91058 Erlangen,
Germany
Search for other works by this author on:
AIP Conf. Proc. 1496, 241–244 (2012)
Citation
M. Hackenberg, K. Huet, R. Negru, J. Venturini, G. Fisicaro, A. La Magna, P. Pichler; Modeling boron profiles in silicon after pulsed excimer laser annealing. AIP Conf. Proc. 6 November 2012; 1496 (1): 241–244. https://doi.org/10.1063/1.4766533
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
The effect of a balanced diet on improving the quality of life in malignant neoplasms
Yu. N. Melikova, A. S. Kuryndina, et al.
Animal intrusion detection system using Mask RCNN
C. Vijayakumaran, Dakshata, et al.
Recognition of cat ras of face and body using convolutional neural networks
Akhmad Wahyu Aji, Esmeralda Contessa Djamal, et al.
Related Content
Larger ClusterBoron® ( B 36 H x ) Implant for USJ Applications
AIP Conference Proceedings (January 2011)
BF 3 PIII modeling: Implantation, amorphisation and diffusion
AIP Conference Proceedings (November 2012)
Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes
AIP Conference Proceedings (November 2012)
Ultra low thermal budget anneals for 3D memories: Access device formation
AIP Conference Proceedings (November 2012)
Solid phase phosphorous activation in implanted silicon by excimer laser irradiation
J. Appl. Phys. (June 2011)