An innovative Kinetic Monte Carlo (KMC) code has been developed, which rules the post-implant kinetics of the defects system in the extremely far-from-the equilibrium conditions caused by the laser irradiation close to the liquid-solid interface. It considers defect diffusion, annihilation and clustering. The code properly implements, consistently to the stochastic formalism, the fast varying local event rates related to the thermal field T(r,t) evolution. This feature of our numerical method represents an important advancement with respect to current state of the art KMC codes. The reduction of the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. Phosphorus activation efficiency, experimentally determined in similar conditions, has been related to the emerging damage scenario.
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6 November 2012
ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology
25–29 June 2012
Valladolid, Spain
Research Article|
November 06 2012
Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes
G. Fisicaro;
G. Fisicaro
CNR IMM, Z.I. VIII Strada 5, I -95121 Catania,
Italy
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Lourdes Pelaz;
Lourdes Pelaz
Department of Electronics, University of Valladolid, 47011 Valladolid,
Spain
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P. Lopez;
P. Lopez
Department of Electronics, University of Valladolid, 47011 Valladolid,
Spain
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M. Italia;
M. Italia
CNR IMM, Z.I. VIII Strada 5, I -95121 Catania,
Italy
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K. Huet;
K. Huet
Excico 13-21 Quai des Gresillons, 92230 Gennevilliers,
France
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J. Venturini;
J. Venturini
Excico 13-21 Quai des Gresillons, 92230 Gennevilliers,
France
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A. La Magna
A. La Magna
CNR IMM, Z.I. VIII Strada 5, I -95121 Catania,
Italy
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AIP Conf. Proc. 1496, 221–224 (2012)
Citation
G. Fisicaro, Lourdes Pelaz, P. Lopez, M. Italia, K. Huet, J. Venturini, A. La Magna; Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes. AIP Conf. Proc. 6 November 2012; 1496 (1): 221–224. https://doi.org/10.1063/1.4766528
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