Characteristics of $BF2$⁠, Ga and In implanted Si after FLA and RTA annealing Available to Purchase

The dopant diffusion, electrical activation, diode I-V characteristics and damage recovery of $BF2$⁠, Ga and In implanted Si after annealing have been investigated for samples with the peak concentration of 1.0×10¹⁹ cm^×3 as p-type dopant atoms. Within this concentration, Ga implanted samples have the lowest sheet resistance and lowest leakage current in diode I-V with good crystalline recovery.