The dopant diffusion, electrical activation, diode I-V characteristics and damage recovery of BF2⁠, Ga and In implanted Si after annealing have been investigated for samples with the peak concentration of 1.0×1019 cm×3 as p-type dopant atoms. Within this concentration, Ga implanted samples have the lowest sheet resistance and lowest leakage current in diode I-V with good crystalline recovery.

Topics
Electrical properties and parameters, Current-voltage characteristic, Electric measurements
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© 2012 American Institute of Physics.
2012
American Institute of Physics
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