The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering the use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (∼10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate the properties of both approaches on Al+ implants in germanium with different anneal treatments.
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6 November 2012
ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology
25–29 June 2012
Valladolid, Spain
Research Article|
November 06 2012
Advanced characterization of carrier profiles in germanium using micro-machined contact probes
T. Clarysse;
T. Clarysse
imec, Kapeldreef 75, B-3001 Leuven,
Belgium
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M. Konttinen;
M. Konttinen
imec, Kapeldreef 75, B-3001 Leuven, Belgium, and Department of Physics, University of Jyväskylä, P.O. Box 35, 40014 Jyväskylä,
Finland
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B. Parmentier;
B. Parmentier
imec, Kapeldreef 75, B-3001 Leuven,
Belgium
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A. Moussa;
A. Moussa
imec, Kapeldreef 75, B-3001 Leuven,
Belgium
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W. Vandervorst;
W. Vandervorst
imec, Kapeldreef 75, B-3001 Leuven, Belgium, and Instituut voor Kern- en Stralingsfysika, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven,
Belgium
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G. Impellizzeri;
G. Impellizzeri
MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Univ. Di Catania, 95123 Catania,
Italy
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E. Napolitani;
E. Napolitani
MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Univ. Di Padova, 35131 Padova,
Italy
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V. Privitera;
V. Privitera
MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Univ. Di Catania, 95123 Catania,
Italy
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P. F. Nielsen;
P. F. Nielsen
Capres A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby,
Denmark
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D. H. Petersen;
D. H. Petersen
DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Building 345 East, DK-2800 Kongens Lyngby,
Denmark
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O. Hansen
O. Hansen
DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Building 345 East, DK-2800 Kongens Lyngby, Denmark, and CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark,DK-2800 Kongens Lyngby,
Denmark
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T. Clarysse
M. Konttinen
B. Parmentier
A. Moussa
W. Vandervorst
G. Impellizzeri
E. Napolitani
V. Privitera
P. F. Nielsen
D. H. Petersen
O. Hansen
imec, Kapeldreef 75, B-3001 Leuven,
Belgium
AIP Conf. Proc. 1496, 167–170 (2012)
Citation
T. Clarysse, M. Konttinen, B. Parmentier, A. Moussa, W. Vandervorst, G. Impellizzeri, E. Napolitani, V. Privitera, P. F. Nielsen, D. H. Petersen, O. Hansen; Advanced characterization of carrier profiles in germanium using micro-machined contact probes. AIP Conf. Proc. 6 November 2012; 1496 (1): 167–170. https://doi.org/10.1063/1.4766516
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