Defect detection in recrystallized ultra-shallow implanted silicon by multiwavelength-excited photoluminescence Available to Purchase

Defect formation and annihilation in ultra-shallow junctions (USJs) before and after rapid thermal annealing are characterized by multiwavelength-excited photoluminescence (PL) with probing depths of the excitation light in a range between 1.5 and 45 μm. Recrystallization of USJs is monitored by transmission microscopy and UV Raman spectroscopy. PL measurements taken at room temperature, enable us to distinguish USJ layers with trap densities (N_t) on the order of 10¹² cm⁻³ or less and those with N_t of 5×10¹² - 10¹⁴ cm⁻³, nondestructively, on an in-line basis.