Simulation of charge carriers generation rate of SiGe quantum dot based intermediate band solar cell Available to Purchase

In this paper, the influence of the utilization of SiGe quantum dot on carrier generation rate for intermediate band solar cell application will be discussed. The simulation performed to calculate the generation rate which is a function of the effective band gap dan the absorption coefficient value of the material has been done with 3 variations of germanium composition and 4 variations of quantum dot size. The performance of SiGe with 50% of Germanium composition will be compared with pure Silicon and pure Germanium while the variations of quantum dot size used are 1nm, 2nm, 3nm and 4nm. Simulation results show that increasing numbers of Germanium atoms within the material combined with larger size of quantum dot leads to higher generation rate and helps broadening the range of photon energy which can contribute on the creation of electron-hole pair. Adding Ge into Si quantum dot is found to be effective to increase the generation rate of electrons and holes.